STB50NE08 n - channel enhancement mode o single feature size ? o power mosfet n typical r ds(on) = 0.020 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge at 100 o c n application oriented characterization n for through-hole version contact sales office description this power mosfet is the latest development of sgs-thomson unique osingle feature size ? o strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters n automotive environment (injection, abs, air-bag, lampdrivers, etc.) internal schematic diagram march 1998 1 3 d 2 pak to-263 (suffix ot4o) absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 80 v v dgr drain- gate voltage (r gs =20k w ) 80 v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c50a i d drain current (continuous) at t c =100 o c35a i dm ( ? ) drain current (pulsed) 200 a p tot total dissipation at t c =25 o c150w derating factor 1 w/ o c dv/dt ( 1 ) peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 50 a, di/dt 300 a/ m s, v dd v (br)dss ,t j t jmax type v dss r ds(on) i d STB50NE08 80 v <0.024 w 50 a 1/8 .com .com .com .com 4 .com u datasheet
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1 62.5 0.5 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 50 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 300 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 80 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 234v r ds(on) static drain-source on resistance v gs =10v i d = 25 a 0.020 0.024 m w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 50 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =25 a 20 35 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 3850 480 105 5100 650 140 pf pf pf STB50NE08 2/8 .com .com .com .com .com 4 .com u datasheet
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =40v i d =25a r g =4.7 w v gs =10v (see test circuit, figure 3) 37 95 50 130 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =64v i d =50a v gs =10v 85 19 28 110 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =64v i d =50a r g =4.7 w v gs =10v (see test circuit, figure 5) 12 30 50 17 40 68 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 50 200 a a v sd ( * ) forward on voltage i sd =50a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 50 a di/dt = 100 a/ m s v dd =30v t j =150 o c (see test circuit, figure 5) 100 400 8 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance STB50NE08 3/8 .com .com .com .com .com 4 .com u datasheet
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STB50NE08 4/8 .com .com .com .com .com 4 .com u datasheet
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STB50NE08 5/8 .com .com .com .com .com 4 .com u datasheet
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STB50NE08 6/8 .com .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 8.95 9.35 0.352 0.368 e 10 10.28 0.393 0.404 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 p011p6/c to-263 (d 2 pak) mechanical data STB50NE08 7/8 .com .com .com .com .com 4 .com u datasheet
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1998 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... STB50NE08 8/8 .com .com .com .com 4 .com u datasheet
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